Applied Physics Publications 2006

Applied Physics Publications 2006

Εφαρμοσμένη Φυσική
2006
  1. Arvanitidis, J., Christofilos, D., Kourouklis, G.A., Delimitis, A., Katsikini, M., Komninou, P., Ves, S., Dimakis, E., and Georgakilas, A., Depth profile of the biaxial strain in a 10 mu m thick InN (0001) film. Journal of Applied Physics, 2006. 100(11).
  2. Arvanitidis, J., Katsikini, M., Ves, S., Delimitis, A., Kehagias, T., Komninou, P., Dimakis, E., Iliopoulos, E., and Georgakilas, A., Raman and transmission electron microscopy characterization of InN samples grown on GaN/Al2O3 by molecular beam epitaxy. Physica Status Solidi B-Basic Solid State Physics, 2006. 243(7): p. 1588-1593.
  3. Christoulakis, S., Suchea, M., Koudoumas, E., Katharakis, M., Katsarakis, N., and Kiriakidis, G., Thickness influence on surface morphology and ozone sensing properties of nanostructured ZnO transparent thin films grown by PLD. Applied Surface Science, 2006. 252(15): p. 5351-5354.
  4. Cros, A., Cantarero, A., Pelekanos, N.T., Georgakilas, A., Pomeroy, J., and Kuball, M., Resonant Raman characterization of InAlGaN/GaN heterostructures. Physica Status Solidi B-Basic Solid State Physics, 2006. 243(7): p. 1674-1678.
  5. Delimitis, A., Gladkov, P., Komninou, P., Kehagias, T., Arvanitidis, J., Ves, S., Katsikini, M., Dimakis, E., and Georgakilas, A., Structural and optical characterisation of thick InN epilayers grown with a single or two step growth process on GaN(0001). Physica Status Solidi a-Applications and Materials Science, 2006. 203(1): p. 162-166.
  6. Dimakis, E., Domagala, J.Z., Delimitis, A., Komninou, P., Adikimenakis, A., Iliopoulos, E., and Georgakilas, A., Structural properties of 10 mu m thick InN grown on sapphire (0001). Superlattices and Microstructures, 2006. 40(4-6): p. 246-252.
  7. Dimakis, E., Iliopoulos, E., Tsagaraki, K., Adikimenakis, A., and Georgakilas, A., Biaxial strain and lattice constants of InN (0001) films grown by plasma-assisted molecular beam epitaxy. Applied Physics Letters, 2006. 88(19).
  8. Dimakis, E., Iliopoulos, E., Tsagaraki, K., and Georgakilas, A., Self-regulating mechanism of InN growth on GaN(0001) by molecular beam epitaxy; from nanostructures to films. Physica Status Solidi a-Applications and Materials Science, 2006. 203(7): p. 1686-1690.
  9. Dimitrakopulos, G.P., Kioseoglou, J., Dimakis, E., Georgakilas, A., Nouet, G., and Komninou, P., Structural properties of quaternary InAlGaN MQW grown by plasma-assisted MBE. Physica Status Solidi a-Applications and Materials Science, 2006. 203(9): p. 2151-2155.
  10. Iliopoulos, E., Georgakilas, A., Dimakis, E., Adikimenakis, A., Tsagaraki, K., Androulidaki, M., and Pelekanos, N.T., InGaN(0001) alloys grown in the entire composition range by plasma assisted molecular beam epitaxy. Physica Status Solidi a-Applications and Materials Science, 2006. 203(1): p. 102-105.
  11. Iliopoulos, E., Zervos, M., Adikimenakis, A., Tsagaraki, K., and Georgakilas, A., Properties of Si-doped GaN and AlGaN/GaN heterostructures grown by RF-MBE on high resistivity Fe-doped GaN. Superlattices and Microstructures, 2006. 40(4-6): p. 313-319.
  12. Karabourniotis, D., Effect of the one-parameter model on the spectral intensity of a self-absorbed line. High Temperature Material Processes, 2006. 10(3): p. 479-490.
  13. Koufaki, M., Sifakis, M., Iliopoulos, E., Pelekanos, N., Modreanu, A., Cimalla, V., Ecke, G., and Aperathitis, E., Optical emission spectroscopy during fabrication of indium-tin-oxynitride films by RF-sputtering. Applied Surface Science, 2006. 253(1): p. 405-408.
  14. Kuzmik, J., Kostopoulos, A., Konstantinidis, G., Carlin, J.F., Georgakilas, A., and Pogany, D., InAIN/GaN HEMTs: A first insight into technological optimization. Ieee Transactions on Electron Devices, 2006. 53(3): p. 422-426.
  15. Lioudakis, E., Othonos, A., Dimakis, E., and Georgakilas, A., Femtosecond time-resolved study in InxGa1-xN (0001) ultrathin epilayers: Effects of high indium mole fraction and thickness of the films. Applied Physics Letters, 2006. 89(24).
  16. Lioudakis, E., Othonos, A., Dimakis, E., Iliopoulos, E., and Georgakilas, A., Ultrafast carrier dynamics in InxGa1-xN (0001) epilayers: Effects of high fluence excitation. Applied Physics Letters, 2006. 88(12).
  17. Muller, A., Neculoiu, D., Vasilache, D., Dascalu, D., Konstantinidis, G., Kosopoulos, A., Adikimenakis, A., Georgakilas, A., Mutamba, K., Sydlo, C., Hartnagel, H.L., and Dadgar, A., GaN micromachined FBAR structures for microwave applications. Superlattices and Microstructures, 2006. 40(4-6): p. 426-431.
  18. Suchea, M., Christoulakis, S., Moschovis, K., Katsarakis, N., and Kiriakidis, G., ZnO transparent thin films for gas sensor applications. Thin Solid Films, 2006. 515(2): p. 551-554.
  19. Suchea, M., Katsarakis, N., Christoulakis, S., Katharakis, A., Kitsopoulos, T., and Kiriakidis, G., Metal oxide thin films as sensing layers for ozone detection. Analytica Chimica Acta, 2006. 573: p. 9-13.
  20. Suchea, M., Katsarakis, N., Christoulakis, S., Nikolopoulou, S., and Kiriakidis, G., Low temperature indium oxide gas sensors. Sensors and Actuators B-Chemical, 2006. 118(1-2): p. 135-141.