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Applied Physics Publications 2009

Applied Physics
2009
  1. Adikimenakis, A., Aretouli, K.E., Iliopoulos, E., Kostopoulos, A., Tsagaraki, K., Konstantinidis, G., and Georgakilas, A., High electron mobility transistors based on the AlN/GaN heterojunction. Microelectronic Engineering, 2009. 86(4-6): p. 1071-1073.
  2. Adikimenakis, A., Sahonta, S.L., Dimitrakopulos, G.P., Domagala, J., Kehagias, T., Komninou, P., Iliopoulos, E., and Georgakilas, A., Effect of AlN interlayers in the structure of GaN-on-Si grown by plasma-assisted MBE. Journal of Crystal Growth, 2009. 311(7): p. 2010-2015.
  3. Ajagunna, A.O., Adikimenakis, A., Iliopoulos, E., Tsagaraki, K., Androulidaki, M., and Georgakilas, A., InN films and nanostructures grown on Si (111) by RF-MBE. Journal of Crystal Growth, 2009. 311(7): p. 2058-2062.
  4. Budianu, E., Muller, R., Purica, M., Eftime, L., Skarvelakis, R., and Kiriakidis, G., Optical sensor with transparent conductive oxides electrodes for microposition detection applications. Thin Solid Films, 2009. 518(4): p. 1057-1059.
  5. Dialynas, G.E., Pantazis, A., Hatzopoulos, Z., Androulidaki, M., Tsagaraki, K., Konstantinidis, G., Xenogianni, C., Trichas, E., Tsintzos, S., Savvidis, P.G., and Pelekanos, N.T., InAs nanostructures on polar GaAs surfaces. International Journal of Nanotechnology, 2009. 6(1-2): p. 124-136.
  6. Fasaki, I., Suchea, M., Mousdis, G., Kiriakidis, G., and Kompitsas, M., The effect of Au and Pt nanoclusters on the structural and hydrogen sensing properties of SnO2 thin films. Thin Solid Films, 2009. 518(4): p. 1109-1113.
  7. Karabourniotis, D., Ribiere, M., and Cheron, B.G., Impact of ion-quasistatic broadening on the determination of the electron density in a laser-induced plasma from line self-reversal. Journal of Physics D-Applied Physics, 2009. 42(10).
  8. Kehagias, T., Dimitrakopulos, G.P., Kioseoglou, J., Kirmse, H., Giesen, C., Heuken, M., Georgakilas, A., Neumann, W., Karakostas, T., and Komninou, P., Indium migration paths in V-defects of InAlN grown by metal-organic vapor phase epitaxy. Applied Physics Letters, 2009. 95(7).
  9. Kiriakidis, G., Transparent Conductive Oxides - TCO 2008 - Preface. Thin Solid Films, 2009. 518(4): p. 1025-1025.
  10. Kiriakidis, G., Suchea, M., Christoulakis, S., and Moschovis, K., Nano-structural and surface characteristics of non-stoichiometric In2O3-x thin films. International Journal of Nanotechnology, 2009. 6(1-2): p. 208-218.
  11. Kortidis, I., Moschovis, K., Mahmoud, F.A., and Kiriakidis, G., Structural analysis of aerosol spray pyrolysis ZnO films exhibiting ultra low ozone detection limits at room temperature. Thin Solid Films, 2009. 518(4): p. 1208-1213.
  12. Mahmoud, F.A. and Kiriakidis, G., NANOCRYSTALLINE ZnO THIN FILM FOR GAS SENSOR APPLICATION. Journal of Ovonic Research, 2009. 5(1): p. 15-20.
  13. Ribiere, M., Karabourniotis, D., and Cheron, B.G., Spectroscopic analysis of the excitation transfer from background air to diffusing aluminum laser produced plasma. Journal of Applied Physics, 2009. 105(8).
  14. Sahonta, S.L., Dimitrakopulos, G.P., Kehagias, T., Kioseoglou, J., Adikimenakis, A., Iliopoulos, E., Georgakilas, A., Kirmse, H., Neumann, W., and Komninou, P., Mechanism of compositional modulations in epitaxial InAlN films grown by molecular beam epitaxy. Applied Physics Letters, 2009. 95(2).
  15. Sofikiti, N., Chaniotakis, N., Grandal, J., Utrera, M., Sanchez-Garcia, M.A., Calleja, E., Iliopoulos, E., and Georgakilas, A., Direct immobilization of enzymes in GaN and InN nanocolumns: The urease case study. Applied Physics Letters, 2009. 95(11).
  16. Trichas, E., Kayambaki, M., Iliopoulos, E., Pelekanos, N.T., and Savvidis, P.G., Resonantly enhanced selective photochemical etching of GaN. Applied Physics Letters, 2009. 94(17).
  17. Tsintzos, S.I., Savvidis, P.G., Deligeorgis, G., Hatzopoulos, Z., and Pelekanos, N.T., Room temperature GaAs exciton-polariton light emitting diode. Applied Physics Letters, 2009. 94(7).
  18. Vajpeyi, A.P., Ajagunna, A.O., Tsagaraki, K., Androulidaki, M., and Georgakilas, A., InGaN nanopillars grown on silicon substrate using plasma assisted molecular beam epitaxy. Nanotechnology, 2009. 20(32).
  19. Vajpeyi, A.P., Ajagunna, A.O., Tsiakatouras, G., Adikimenakis, A., Iliopoulos, E., Tsagaraki, K., Androulidaki, M., and Georgakilas, A., Spontaneous growth of III-nitride nanowires on Si by molecular beam epitaxy. Microelectronic Engineering, 2009. 86(4-6): p. 812-815.
  20. Vajpeyi, A.P., Georgakilas, A., Tsiakatouras, G., Tsagaraki, K., Androulidaki, M., Chua, S.J., and Tripathy, S., Effect of substrate temperature on spontaneous GaN nanowire growth and optoelectronic properties. Physica E-Low-Dimensional Systems & Nanostructures, 2009. 41(3): p. 427-430.