Code
Φ-572
Level
Graduate
Category
B
Teacher
A. Georgakilas
ECTS
6
Hours
6
Semester
Spring
Display
Yes
Offered
Yes
Teacher Webpage
Goal of the course
This is a post-graduate level course. It provides physical insight into the operation of fundamental semiconductor devices, with analytical mathematical description of the physical processes and operation characteristics of the devices. The acquired knowledge constitutes the necessary scientific background for further studies on micro-, nano- and opto-electronics.
Program
Tuesday 09:00-11:00, Room 4
Thursday 09:00-11:00, Room 4
Friday 09:00-11:00, Room 4
Thursday 09:00-11:00, Room 4
Friday 09:00-11:00, Room 4
Syllabus
Introduction to the physics of semiconductors :
Families of semiconductor, energy bands, effective mass, free electron and hole, energy band diagram, distribution and concentrations of carriers at thermal equilibrium, generation-recombination, drift and diffusion currents, quasi-Fermi levels, continuity equations, minority carrier diffusion equations
pn junction diode :
Abrupt and linear junctions, electrostatic description, C-V and I-V equations for the ideal diode, deviations from ideal behavior
Bipolar junction transistor (BJT) : Terminology, symbols and regions of operation, I-V relations for the ideal transistor, I-V relations including recombination in the base, additional deviations from the ideal transistor, Ebers-Moll equations
Metal-semiconductor junction :
Energy band diagram of ideal junction, rectifying contact (Schottky diode), electrostatic description, Schottky effect, basic I-V relation, thermionic emission theory, diffusion theory, tunneling currents, experimental determination of ΦB and Vbi, effect of surface states, ohmic contacts
Metal-insulator-semiconductor junction : The metal-oxide-silicon (MOS) junction, bias on the MOS, the different states of the surface region of the semiconductor, capacitance, flat-band voltage, threshold voltage and density of charge in the inversion layer, effect of oxide and interface charges, Charge-Couple Devices (CCDs)
Field Effect Trnasistor (FET) :
I-V relations for FETs with gate consisting of a pn junction (JFET) or a Schottky diode (MESFET) or a MOS junction (MOSFET), determination of MOSFET parameters
Families of semiconductor, energy bands, effective mass, free electron and hole, energy band diagram, distribution and concentrations of carriers at thermal equilibrium, generation-recombination, drift and diffusion currents, quasi-Fermi levels, continuity equations, minority carrier diffusion equations
pn junction diode :
Abrupt and linear junctions, electrostatic description, C-V and I-V equations for the ideal diode, deviations from ideal behavior
Bipolar junction transistor (BJT) : Terminology, symbols and regions of operation, I-V relations for the ideal transistor, I-V relations including recombination in the base, additional deviations from the ideal transistor, Ebers-Moll equations
Metal-semiconductor junction :
Energy band diagram of ideal junction, rectifying contact (Schottky diode), electrostatic description, Schottky effect, basic I-V relation, thermionic emission theory, diffusion theory, tunneling currents, experimental determination of ΦB and Vbi, effect of surface states, ohmic contacts
Metal-insulator-semiconductor junction : The metal-oxide-silicon (MOS) junction, bias on the MOS, the different states of the surface region of the semiconductor, capacitance, flat-band voltage, threshold voltage and density of charge in the inversion layer, effect of oxide and interface charges, Charge-Couple Devices (CCDs)
Field Effect Trnasistor (FET) :
I-V relations for FETs with gate consisting of a pn junction (JFET) or a Schottky diode (MESFET) or a MOS junction (MOSFET), determination of MOSFET parameters
Bibliography
«Οπτοηλεκτρονική», Jasprit Singh, ΕΚΔΟΣΕΙΣ Α.ΤΖΙΟΛΑ Ε., 1998
«Αρχές Ηλεκτρονικών Υλικών και Διατάξεων», S. O. Kasap, ΕΚΔΟΣΕΙΣ Παπασωτηρίου, 2004
«Device Electronics for Integrated Circuits», R.S. Muller & T.I. Kamins, 2nd Edition, John Wiley & Sons, NY, 1986
«Advanced Semiconductor Fundamentals», R. F. Pierret, Modular Series on Solid State Devices v.6, Addison-Wesley, 1989
«The PN Junction Diode», Second Edition, G. W. Neudeck, Modular Series on Solid State Devices v.2, Addison-Wesley, 1989
«The Bipolar junction Transistor», G. W. Neudeck, Modular Series on Solid State Devices v.3, Addison-Wesley, 1989
«Physics of Semiconductor Devices», 3rd edition, S. M. Sze and K. K. Ng, John Wiley & Sons, NJ, 2007
«Physics of Semiconductor Devices», M. Shur, Prentice Hall, NJ, 1990
«Solid State electronic Devices», B.G. Streetman and S. Banerjee, 6th Edition, Prentice Hall
«Αρχές Ηλεκτρονικών Υλικών και Διατάξεων», S. O. Kasap, ΕΚΔΟΣΕΙΣ Παπασωτηρίου, 2004
«Device Electronics for Integrated Circuits», R.S. Muller & T.I. Kamins, 2nd Edition, John Wiley & Sons, NY, 1986
«Advanced Semiconductor Fundamentals», R. F. Pierret, Modular Series on Solid State Devices v.6, Addison-Wesley, 1989
«The PN Junction Diode», Second Edition, G. W. Neudeck, Modular Series on Solid State Devices v.2, Addison-Wesley, 1989
«The Bipolar junction Transistor», G. W. Neudeck, Modular Series on Solid State Devices v.3, Addison-Wesley, 1989
«Physics of Semiconductor Devices», 3rd edition, S. M. Sze and K. K. Ng, John Wiley & Sons, NJ, 2007
«Physics of Semiconductor Devices», M. Shur, Prentice Hall, NJ, 1990
«Solid State electronic Devices», B.G. Streetman and S. Banerjee, 6th Edition, Prentice Hall