Eleftherios Iliopoulos obtained his BSc in Physics from the University of Athens in 1994 and his Ph.D. degree from Boston University, USA in 2002. His thesis concerned studies of epitaxial growth kinetics and investigations of spontaneous formation of superllatices in aluminum gallium nitride (AlGaN) alloys. His academic genealogy tree is here.
Since 2004 his worked as a research associate in the Institute of Electronic Structure and Lasers (IESL) of the Foundation for Research and Technology-Hellas (FORTH) and since 2005 as a visiting assistant professor (PD407) in the Physics Dept. of University of Crete, where he was appointed Assistant Professor in January 2009. He was promoted to an Associate Professor in 2017. He has collaborated with a number companies (EADS, Aixtron , III-V Labs, Lokheed-Martin Inc., EG&G Inc., BAE Inc., Astex Inc., Epion Inc.) in research project concerning epitaxial growth of III-N semiconductors and electronic and optoelectronic devices based on their heterostructures.
Current research interests include epitaxial growth of III-Nitride semiconductors (AlN, GaN, InN) and their ternary and quaternaries alloys in the whole composition range, their heterostructures and nanostructures, studies of their physical properties and application in novel micro/nano-electronic devices (resonant tunneling diodes, quantum dot photodetectors etc.)
