https://www.iesl.forth.gr/en/people/georgakilas-alexandros
Alexandros Georgakilas obtained his BSc. in Physics from the University of Patras in 1984 and his Ph.D. from the Physics Department, University of Crete in 1990. His thesis was focused on the epitaxial growth of III-V semiconductors on crystalline Si substrates and the research was carried out in the microelectronics laboratories of Thomson-CSF/LCR in Paris and the Research Center of Crete (RCC)/IESL at Heraklion.
Between 1984 and 1995 he worked as a research assistant or research associate in the Institute of Electronic Structure and Laser (IESL) of the Foundation for Research and Technology-Hellas (FORTH), Heraklion, Crete. In 1987 he was at Thomson-CSF, Paris, France and in 1991-1992 at the University of Maryland, College Park, MD, USA. In September 1995 he joined the Physics Department of University of Crete as an assistant professor and was appointed as an associate professor in October 2002. He was promoted to a Professor in 2010. He served as Chairman of the Department of Physics during 2019-2023.
Research in applied physics and materials science of advanced semiconductor materials and devices, with emphasis on:
- Molecular Beam Epitaxy (MBE) of novel III-V semiconductor heterostructure and nanostructure materials for advanced electronic and optoelectronic devices
- Development of technologies integrating III-V semiconductor devices on other substrates, such as Si
- Understanding the structural properties and their interrelation with the electronic properties of III-V semiconductor interfaces and thin films
- Understanding the material effects on the performance of III-V semiconductor devices
Review presentation of his research on Molecular Beam Epitaxy as a keynote lecturer at the "37th Panhellenic Conference on Solid State Physics & Materials Science", 17-20 September 2023, Thessaloniki - [PDF file]
