Applied Physics Publications 2005

Applied Physics Publications 2005

Applied Physics
2005
  1. Alexandropoulos, D., Adams, M.J., Hatzopoulos, Z., and Syvridis, D., Proposed scheme for polarization insensitive GaInNAs-based semiconductor optical amplifiers. Ieee Journal of Quantum Electronics, 2005. 41(6): p. 817-822.
  2. Alifragis, Y., Georgakilas, A., Konstantinidis, G., Iliopoulos, E., Kostopoulos, A., and Chaniotakis, N.A., Response to anions of AlGaN/GaN high-electron-mobility transistors. Applied Physics Letters, 2005. 87(25).
  3. Alifragis, Y., Konstantinidis, G., Georgakilas, A., and Chaniotakis, N., Anion selective potentiometric sensor based on gallium nitride crystalline membrane. Electroanalysis, 2005. 17(5-6): p. 527-531.
  4. Androulakis, J., Gardelis, S., Giapintzakis, J., Gagaoudakis, E., and Kiriakidis, G., Indium oxide as a possible tunnel barrier in spintronic devices. Thin Solid Films, 2005. 471(1-2): p. 293-297.
  5. Chaniotakis, N.A., Alifragis, Y., Georgakilas, A., and Konstantinidis, G., GaN-based anion selective sensor: Probing the origin of the induced electrochemical potential. Applied Physics Letters, 2005. 86(16).
  6. Christoulakis, S., Suchea, M., Katharakis, M., Katsarakis, N., Koudoumas, E., and Kiriakidis, G., ZnO nanostructured transparent thin films by PLD. Reviews on Advanced Materials Science, 2005. 10(4): p. 331-334.
  7. Dimakis, E., Iliopoulos, E., Tsagaraki, K., and Georgakilas, A., Physical model of InN growth on Ga-face GaN (0001) by molecular-beam epitaxy. Applied Physics Letters, 2005. 86(13).
  8. Dimakis, E., Iliopoulos, E., Tsagaraki, K., Kehagias, T., Komninou, P., and Georgakilas, A., Heteroepitaxial growth of In-face InN on GaN (0001) by plasma-assisted molecular-beam epitaxy. Journal of Applied Physics, 2005. 97(11).
  9. Dimakis, E., Tsagaraki, K., Iliopoulos, E., Komninou, P., Kehagias, T., Delimitis, A., and Georgakilas, A., Correlation between nucleation, morphology and residual strain of InN grown on Ga-face GaN (0001). Journal of Crystal Growth, 2005. 278(1-4): p. 367-372.
  10. Iliopoulos, E., Adikimenakis, A., Dimakis, E., Tsagaraki, K., Konstantinidis, G., and Georgakilas, A., Active nitrogen species dependence on radiofrequency plasma source operating parameters and their role in GaN growth. Journal of Crystal Growth, 2005. 278(1-4): p. 426-430.
  11. Ippolito, S.J., Kandasamy, S., Kalantar-Zadeh, K., Wlodarski, W., Galatsis, K., Kiriakidis, G., Katsarakis, N., and Suchea, M., Highly sensitive layered ZnO/LiNbO3 SAW device with InOx selective layer for NO2 and H-2 gas sensing. Sensors and Actuators B-Chemical, 2005. 111: p. 207-212.
  12. Karabourniotis, D. and van der Mullen, J., Numerical validation of a self-absorption model for plasma radiation. Journal of Physics D-Applied Physics, 2005. 38(17): p. 3016-3027.
  13. Kehagias, T., Delimitis, A., Komninou, P., Iliopoulos, E., Dimakis, E., Georgakilas, A., and Nouet, G., Misfit accommodation of compact and columnar InN epilayers grown on Ga-face GaN (0001) by molecular-beam epitaxy. Applied Physics Letters, 2005. 86(15).
  14. Kehagias, T., Iliopoulos, E., Delimitis, A., Nouet, G., Dimakis, E., Georgakilas, A., and Komninou, P., Interfacial structure of MBE grown InN on GaN. Physica Status Solidi a-Applications and Materials Science, 2005. 202(5): p. 777-780.
  15. Kioseoglou, J., Bere, A., Komninou, P., Dimitrakopulos, G.P., Nouet, G., Iliopoulos, E., Serra, A., and Karakostas, T., Atomic simulations and HRTEM observations of a Sigma 18 tilt grain boundary in GaN. Physica Status Solidi a-Applications and Materials Science, 2005. 202(5): p. 799-803.
  16. Kiriakidis, G., Suchea, M., Christoulakis, S., and Katsarakis, N., High performance gas sensing materials based on nanostructed metal oxide films. Reviews on Advanced Materials Science, 2005. 10(3): p. 215-223.
  17. Kontos, A.G., Raptis, Y.S., Pelekanos, N.T., Georgakilas, A., Bellet-Amalric, E., and Jalabert, D., Micro-Raman characterization of InxGa1-xN/GaN/Al2O3 heterostructures. Physical Review B, 2005. 72(15).
  18. Le Thomas, N., Pelekanos, N.T., and Hatzopoulos, Z., Selective measurement of hole tunneling times through AlGaAs barriers based on the quantum confined Stark effect. Physical Review B, 2005. 72(23).
  19. Osvald, J., Kuzmik, J., Konstantinidis, G., Lobotka, P., and Georgakilas, A., Temperature dependence of GaN Schottky diodes I-V characteristics. Microelectronic Engineering, 2005. 81(2-4): p. 181-187.
  20. Pantazis, A., Neculoiu, D., Hatzopoulos, Z., Vasilache, D., Lagadas, M., Dragoman, M., Buiculescu, C., Petrini, I., Muller, A.A., Konstantinidis, G., and Muller, A., Millimeter-wave passive circuit elements based on GaAs micromachining. Journal of Micromechanics and Microengineering, 2005. 15(7): p. S53-S59.
  21. Suchea, M., Christoulakis, S., Moschovis, K., Katsarakis, N., and Kiriakidis, G., Nanostructured ZnO and ZAO transparent thin films by sputtering-surface characterization. Reviews on Advanced Materials Science, 2005. 10(4): p. 335-340.